Modulation of a Laser Diode with a Transistor field effect metal-oxide-semiconductor

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

A compact quantum correction model for symmetric double gate metal-oxide- semiconductor field-effect transistor

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a stro...

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...